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LHF00L28
Table 3. Bus Operation (1, 2)
8
Mode
Notes
RST#
CE#
OE#
WE#
Address
DQ 15-0
RY/BY#
(8)
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Read Query
Read Status
Register
Write
6
3
6
6,7
6
4,5,6
V IH
V IH
V IH
V IL
V IH
V IH
V IH
V IH
V IL
V IL
V IH
X
V IL
V IL
V IL
V IL
V IL
V IH
X
X
V IL
V IL
V IL
V IH
V IH
V IH
X
X
V IH
V IH
V IH
V IL
X
X
X
X
See
Table 2
See
Appendix
X
X
D OUT
High Z
High Z
High Z
See
Table 2
See
Appendix
D OUT
D IN
High Z
X
X
High Z
High Z
High Z
X
X
NOTES:
1. Refer to DC Characteristics for V IL or V IH voltages.
2. X can be V IL or V IH for control pins and addresses.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, program or OTP program are reliably
executed when V CC =2.7V-3.6V.
5. Refer to Table 4 for valid D IN during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LHF00LXX series for more information about query code.
8. RY/BY# is V OL when the WSM (Write State Machine) is executing internal block erase, full chip erase, program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program inactive),
program suspend mode, or reset mode.
Rev. 2.45
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